| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Toshiba America Electronic Components | TGI5964-120L | RF Small Signal FieldEffect Transistor NChannel (Alt: TGI5964-120L) | EBV Elektronik | 0 | 0 |
$0
|
🛒 Buy Now |
Download Datasheet (377.41 KB)
TGI5964-120L
377.41 KB
Microwave power gan hemt.
MICROWAVE POWER GaN HEMT
TGI5964-120L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout=.
51.0dBm at Pin= 43dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25d.
📁 Related Datasheet
TGI5059-120L - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI5059-120L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN
GL= 13.5dB at .
TGI5867-130LHA - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI5867-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN
GL= 12.5dB at .
TGI5867-25L - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN
GL= 13.5dB at Pin.
TGI5867-50L - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI5867-50L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN
GL= 13.5dB at 5.
TGI5867-60LHA - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI5867-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48.0dBm at Pin= 40dBm ŋHIGH GAIN
GL= 12.5dB at P.
TGI0910-50 - MICROWAVE POWER GaN HEMT
(Toshiba)
MICROWAVE POWER GaN HEMT
TGI0910-50
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 9.0dB at Pin= .
