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TGI5867-25L MICROWAVE POWER GaN HEMT

TGI5867-25L Description

MICROWAVE POWER GaN HEMT TGI5867-25L .

TGI5867-25L Features

* ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -40dBc(Min. ) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL C

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