TGI5059-120L Datasheet, Hemt, Toshiba

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	Toshiba America Electronic Components	TGI5059-120L	TGI5059-120L	Trans RF FET 50V 18A 3Pin 7AA06A SMD (Alt: TGI5059-120L)	EBV Elektronik	0	0	$0	🛒 Buy Now

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TGI5059-120L

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Microwave power gan hemt.

･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 13.5dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at P

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TGI5059-120L MICROWAVE POWER GaN HEMT Toshiba