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TGI5059-120L Datasheet - Toshiba

TGI5059-120L MICROWAVE POWER GaN HEMT

TGI5059-120L Features

* ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 13.5dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBO

TGI5059-120L Datasheet (467.54 KB)

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Datasheet Details

Part number:

TGI5059-120L

Manufacturer:

Toshiba ↗

File Size:

467.54 KB

Description:

Microwave power gan hemt.

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TGI5059-120L MICROWAVE POWER GaN HEMT Toshiba

TGI5059-120L Distributor