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TK110N65Z Datasheet - Toshiba

TK110N65Z Silicon N-Channel MOSFET

TK110N65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110N65Z 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximu

TK110N65Z Datasheet (479.23 KB)

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Datasheet Details

Part number:

TK110N65Z

Manufacturer:

Toshiba ↗

File Size:

479.23 KB

Description:

Silicon n-channel mosfet.

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TK110N65Z Silicon N-Channel MOSFET Toshiba

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