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TK11Q65W - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK11Q65W
Manufacturer	Toshiba ↗
File Size	243.73 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK11Q65W-Toshiba.pdf

TK11Q65W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (N.

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Published: Dec 30, 2023 |