* with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed stor
TMM2018AD Datasheet (203.31 KB)
TMM2018AD
203.31 KB
Static ram.
TOSHIBA MOS MEMORY PRODUCT
2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS
TMM2018AO-25, TMM2018AO-35 TMM2018A.
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