* with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed stor
TMM2018AD-25 Datasheet (203.31 KB)
TMM2018AD-25
203.31 KB
Static ram.
TOSHIBA MOS MEMORY PRODUCT
2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS
TMM2018AO-25, TMM2018AO-35 TMM2018A.
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