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TMM2018AD-25, TMM2018AD STATIC RAM

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Description

TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018A.

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This datasheet PDF includes multiple part numbers: TMM2018AD-25, TMM2018AD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
TMM2018AD-25, TMM2018AD
Manufacturer
Toshiba ↗
File Size
203.31 KB
Datasheet
TMM2018AD-Toshiba.pdf
Description
STATIC RAM
Note
This datasheet PDF includes multiple part numbers: TMM2018AD-25, TMM2018AD.
Please refer to the document for exact specifications by model.

Features

* with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed stor

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