TMM27128ADI, Toshiba
TOSHIBA MOS MEMORY PRODUCT
16,3B4 WORD X B BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
N·CHANNEL SILICON STACKED GATE MOS
TMM2712.
TMM27128ADI-15, Toshiba
TOSHIBA MOS MEMORY PRODUCT
16,3B4 WORD X B BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
N·CHANNEL SILICON STACKED GATE MOS
TMM2712.
TMM27128ADI-20, Toshiba
TOSHIBA MOS MEMORY PRODUCT
16,3B4 WORD X B BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
N·CHANNEL SILICON STACKED GATE MOS
TMM2712.
TMM27256AD, Toshiba
TOSHIBA MOS MEMORY PRODUCT
32,76B WORD X B BIT N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27256AD-15, TMM27256AD-150
SILIC.
