* Vee tAee 1eC2 leel -15 150ns I 5V±5% I 100mA 30mA -20 200ns
* Wide operating temparature range -40-85'C
* Full static operation
* High speed programming mode
* Single location progra
TMM27128ADI Datasheet (335.40 KB)
TMM27128ADI
335.40 KB
Uv erasable and electrically programmable read only memory.
TOSHIBA MOS MEMORY PRODUCT
16,3B4 WORD X B BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
N
*CHANNEL SILICON STACKED GATE MOS
TMM.
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