TPCA8056-H - MOSFET

Product Overview

Toshiba

Part number	TPCA8056-H
Manufacturer	Toshiba
File Size	229.37 KB
Description	MOSFET
Datasheet	TPCA8056-H Datasheet
Additional preview pages of the TPCA8056-H datasheet.

(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 17 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2010-06-18 Rev.1.0 TPCA8056-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless other.

📁 Similar Datasheet

TPCA8003-H - Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8004-H - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8005-H - Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8006-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCA8007-H - Switching Regulator Applications (Toshiba Semiconductor)
TPCA8008-H - Field Effect Transistor (Toshiba Semiconductor)
TPCA8009-H - High Speed Switching Applications (Toshiba Semiconductor)
TPCA8010-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Sep 3, 2014 |