TPCA8059-H - MOSFET

Toshiba

Datasheet Details

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-sou.

📁 TPCA8059-H Similar Datasheet

TPCA8003-H - Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8004-H - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8005-H - Silicon N Channel MOS Type (Toshiba Semiconductor)
TPCA8006-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCA8007-H - Switching Regulator Applications (Toshiba Semiconductor)
TPCA8008-H - Field Effect Transistor (Toshiba Semiconductor)
TPCA8009-H - High Speed Switching Applications (Toshiba Semiconductor)
TPCA8010-H - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Sep 2, 2014 |