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TPCA8083 Datasheet - Toshiba

TPCA8083 MOSFETs

TPCA8083 Features

* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain

TPCA8083-Toshiba.pdf

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Datasheet Details

Part number:

TPCA8083

Manufacturer:

Toshiba ↗

File Size:

232.63 KB

Description:

Mosfets.

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