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TPCA8082 Datasheet - Toshiba

TPCA8082 MOSFETs

TPCA8082 Features

* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain

TPCA8082-Toshiba.pdf

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Datasheet Details

Part number:

TPCA8082

Manufacturer:

Toshiba ↗

File Size:

228.97 KB

Description:

Mosfets.

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