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TPH5R906NH Datasheet - Toshiba

TPH5R906NH MOSFETs

TPH5R906NH Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 18 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

TPH5R906NH-Toshiba.pdf

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Datasheet Details

Part number:

TPH5R906NH

Manufacturer:

Toshiba ↗

File Size:

235.68 KB

Description:

Mosfets.

TPH5R906NH Distributor

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