* (1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this
TTB1067B Datasheet (316.23 KB)
TTB1067B
316.23 KB
Silicon pnp transistors.
Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor) TTB1067B TTB1067B 1. Applications Micromotor Drivers Hamm.
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