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TTB1067B Datasheet - Toshiba

TTB1067B Silicon PNP Transistors

TTB1067B Features

* (1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this

TTB1067B Datasheet (316.23 KB)

Preview of TTB1067B PDF

Datasheet Details

Part number:

TTB1067B

Manufacturer:

Toshiba ↗

File Size:

316.23 KB

Description:

Silicon pnp transistors.

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TTB1067B Silicon PNP Transistors Toshiba

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