TTB1020B Silicon PNP Transistors

Toshiba

Description

Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B 1.Applications * High-Current Switching * Hammer Drivers 2..

📥 Download Datasheet

TTB1020B Datasheet Preview — Preview of TTB1020B PDF

Datasheet Specifications

Part number: TTB1020B
Manufacturer: Toshiba ↗
File Size: 207.04 KB
Datasheet: TTB1020B-Toshiba.pdf
Description: Silicon PNP Transistors

Features

* (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electroni

Applications

* High-Current Switching

TTB1020B Distributors

📁 Related Datasheet

TTB115N08A TTB115N08AA TTB135N68A TTB145N08A TTB0503-1T TTB0505-1T

📌 All Tags

TTB1020B Silicon PNP Transistors Toshiba

Toshiba TTB1020B-like datasheet

TTB1067B