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TTB1020B Datasheet - Toshiba

TTB1020B Silicon PNP Transistors

TTB1020B Features

* (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015-2020 Toshiba Electroni

TTB1020B-Toshiba.pdf

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Datasheet Details

Part number:

TTB1020B

Manufacturer:

Toshiba ↗

File Size:

207.04 KB

Description:

Silicon pnp transistors.

TTB1020B Distributor

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TTB1020B TTB1020B Silicon PNP Transistors Toshiba