Datasheet Details
| Part number | TTB135N68A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 696.12 KB |
| Description | 68V N-Channel Trench MOSFET |
| Datasheet | TTB135N68A-Unigroup.pdf |
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Overview: TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD.
| Part number | TTB135N68A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 696.12 KB |
| Description | 68V N-Channel Trench MOSFET |
| Datasheet | TTB135N68A-Unigroup.pdf |
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|
|
Product Summary Trench Power technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) 68V 135A < 5.0mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested TO-263 TO-220 Part Number TTB135N68A TTP135N68A Package Type TO-263 TO-220 Form Tape&Reel Tube Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current A Avalanche Current A TC =25ºC TC =100ºC Single Pulse Avalanche Energy L =0.3mH A Power Dissipation C TC =25ºC TC =100ºC Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS PD TJ, TSTG 68 ±20 105 105 405 44 290 160 80 -55 to 175 Thermal Characteristics Parameter Symbol Maximum Maximum Junction-to-Case Steady-State RƟJC 0.95 Maximum Junction-to-Ambient Steady-State RƟJA 100 V1.0 1 Marking 135N68A 135N68A Units V V A A A mJ W W ºC Units ºC/W .tsinghuaicwx.
TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V 68 IDSS Zero Gate Voltage Drain Current VDS =68V, VGS =0V TJ =25ºC TJ =100ºC IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 2 RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A gFS Forward Transconductance VDS = 5V, ID =20A VSD Diode Forward Voltage IS =20A, VGS =0V IS Maximum Body-Diode Continuous Current B DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING PARAMETERS VGS =0V, VDS =30V,
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