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TTC5460B Datasheet - Toshiba

TTC5460B Silicon NPN Transistor

TTC5460B Features

* (1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-is

TTC5460B-Toshiba.pdf

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Datasheet Details

Part number:

TTC5460B

Manufacturer:

Toshiba ↗

File Size:

158.58 KB

Description:

Silicon npn transistor.

TTC5460B Distributor

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TTC5460B TTC5460B Silicon NPN Transistor Toshiba