TTC5460B - Silicon NPN Transistor

Toshiba

Datasheet Details

(1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial production 2014-02 2016-02-05 Rev.1.0 TTC5460B 4.

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Published: Jan 21, 2021 |