* (1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-is
TTC5460B Datasheet (158.58 KB)
TTC5460B
158.58 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC5460B
1. Applications
* Dynamic Focus
* High-Voltage Switching
* High-.
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