TTC005 - NPN Transistor

Toshiba

Datasheet Details

(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switching: tf = 0.13 µs (typ. ) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC005 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 600 V VCEX 600 Collector-emitter voltage VCEO 285 Emitter-base voltage Collector current (DC) Collector current.

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Published: Jan 20, 2021 |