* (1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switching: tf = 0.13 ยตs (typ.) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC005 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25๎) Characteristic
TTC005
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Npn transistor.
Bipolar Transistors Silicon NPN Triple-Diffused Type TTC005 1. Applications High-Speed High-Voltage Switching Switching Voltage Re.
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