TTC008 - NPN Transistor

Toshiba

Datasheet Details

(1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V (2) High DC current gain: hFE = 100 to 200 (IC = 0.3 A) (3) Excellent switching times: tf = 0.1 µs (typ. ) 3. Packaging and Internal Circuit TTC008 New PW-Mold2 1. Base 2. Collector 3. Emitter Start of commercial production 2010-05 1 2014-04-03 Rev.2.0 TTC008 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter.

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Published: Jan 20, 2021 |