TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature .
