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TTK101MFV Datasheet - Toshiba

TTK101MFV Silicon N-Channel MOSFET

TTK101MFV For ECM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV Application for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.) @VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDO -20 V IG 10 mA PD (No.

TTK101MFV Datasheet (216.87 KB)

Preview of TTK101MFV PDF

Datasheet Details

Part number:

TTK101MFV

Manufacturer:

Toshiba ↗

File Size:

216.87 KB

Description:

Silicon n-channel mosfet.

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TTK101MFV Silicon N-Channel MOSFET Toshiba

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