TTK2837 Datasheet - Toshiba

TTK2837 Silicon N Channel Field Effect Transistor

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 µA (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm 15.9 MAX. 3.2 ± 0.2 2.0 1.0 9.0 4.5 20.0 ± 0.3 3.3 MAX. 2.0 20.5 ± 0.5 Absolute Maximum Ratings (Ta = 25°C.

TTK2837 Features

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TTK2837 Datasheet (293.37 KB)