XPH1R104PS - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH1R104PS SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-10 2021-09-30 Rev.2.0 XPH1R104PS 4. Absolute Maxim.

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Published: Apr 29, 2024 |