* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH2R106NC SOP Advan
XPH2R106NC Datasheet (557.73 KB)
XPH2R106NC
557.73 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*-H)
XPH2R106NC
1. Applications
* Automotive
* Motor Drivers
* Switching Voltage Regul.
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