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XPN12006NC Datasheet - Toshiba

XPN12006NC Silicon N-Channel MOSFET

XPN12006NC Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPN12006NC TSON Adva

XPN12006NC Datasheet (560.33 KB)

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Datasheet Details

Part number:

XPN12006NC

Manufacturer:

Toshiba ↗

File Size:

560.33 KB

Description:

Silicon n-channel mosfet.

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XP-C LED (CREE)

XP-E2 LED (Cree)

XP-G2 LEDs (Cree)

XP-G3 LEDs (Cree)

TAGS

XPN12006NC Silicon N-Channel MOSFET Toshiba

XPN12006NC Distributor