XPN9R614MC - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ. ) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit XPN9R614MC TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2018-09 2021-12-08 Rev.6.0 XPN9R614MC 4. Ab.

📁 XPN9R614MC Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 31, 2024 |