XPQ1R00AQB - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.84 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit (Note) XPQ1R00AQB 1: Gate 9: Drain (heatsink) 2 to 8: Source L-TOGLTM Note: L-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation. ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial producti.

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Published: Nov 28, 2024 |