XPQR3004PB - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPQR3004PB 1: Gate 9: Drain (heatsink) 2 to 8: Source L-TOGLTM Note: L-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation. ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-.

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Published: Jul 19, 2023 |