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HN2A26FS Frequency General-Purpose Amplifier Applications

HN2A26FS Description

HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm *

HN2A26FS Applications

* Unit: mm
* Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. High voltage: VCEO =
* 50 V High current: IC =
* 100 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC =
* 0.1 mA)

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Frequency General-Purpose Amplifier Applications Toshiba Semiconductor
Toshiba Semiconductor HN2A26FS-like datasheet