T2G4003532-FL Datasheet - TriQuint Semiconductor

T2G4003532-FL, GaN RF Power Transistor

T2G4003532-FL 30W, 32V DC * 3.5 GHz, GaN RF Power Transistor Applications * Military radar * Civilian radar * Professi.
The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.

Features

* Frequency: DC to 3.5 GHz
* Output Power (P3dB): 28 W at 3.5 GHz
* Linear Gain: >16 dB at 3.5 GHz
* Operating Voltage: 32 V

Applications

* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentation
* Wideband or narrowband amplifiers

T2G4003532-FL-TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

T2G4003532-FL

Manufacturer:

TriQuint Semiconductor

File Size:

0.96 MB

Description:

GaN RF Power Transistor

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