T2G4003532-FL
TriQuint Semiconductor
0.96 MB
Gan rf power transistor.
T2G4003532-FL
30W, 32V DC * 3.5 GHz, GaN RF Power Transistor
Applications
* Military radar * Civilia.
The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 G.
📁 Related Datasheet
T2G4003532-FS - GaN RF Power Transistor
(TriQuint Semiconductor)
T2G4003532-FS
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar • Civilian radar • Professional and military radio munic.
T2G6003028-FL - GaN RF Power Transistor
(TriQuint Semiconductor)
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar • Civilian radar • Professional and military radio municat.
T2G6003028-FL - GaN RF Power Transistor
(qorvo)
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar • Civilian radar • Professional and military radio municat.
T2-1T-KK81 - RF Transformer
(Mini-Circuits)
Surface Mount
RF Transformer
50Ω 0.07 to 200 MHz
T2-1T-KK81+ T2-1T-KK81
Maximum Ratings
Operating Temperature
-20°C to 85°C
Storage Temperature
.
T2-1T-KK81+ - RF Transformer
(Mini-Circuits)
Surface Mount
RF Transformer
50Ω 0.07 to 200 MHz
T2-1T-KK81+ T2-1T-KK81
Maximum Ratings
Operating Temperature
-20°C to 85°C
Storage Temperature
.
T20-250 - TIRISTORI
(M&G Electronic)
TIRISTORI I TRIJACI
TIR
TIRISTORI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
SNAZNI TIRISTORI
UDRM ITAV ITSM IDRM
Tip Cena.
