T2G6003028-FL Datasheet - TriQuint Semiconductor

T2G6003028-FL, GaN RF Power Transistor

T2G6003028-FL 30W, 28V DC * 6 GHz, GaN RF Power Transistor Applications * Military radar * Civilian radar * Profession.
The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.

Features

* Frequency: DC to 6 GHz
* Output Power (P3dB): 25 W at 5.6 GHz
* Linear Gain: >14 dB at 5.6 GHz
* Operating Voltage: 28 V

Applications

* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentation
* Wideband or narrowband amplifiers

T2G6003028-FL-TriQuintSemiconductor.pdf

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Datasheet Details

Part number:

T2G6003028-FL

Manufacturer:

TriQuint Semiconductor

File Size:

0.99 MB

Description:

GaN RF Power Transistor

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