T2G6003028-FL Datasheet, Transistor, TriQuint Semiconductor

T2G6003028-FL Features

• Transistor
• Frequency: DC to 6 GHz
• Output Power (P3dB): 25 W at 5.6 GHz
• Linear Gain: >14 dB at 5.6 GHz
• Operating Voltage: 28 V
• Low thermal resistan

PDF File Details

Part number:

T2G6003028-FL

Manufacturer:

TriQuint Semiconductor

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0.99MB

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📄 Datasheet

Description:

Gan rf power transistor. The TriQuint T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with T

T2G6003028-FL Application

• Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentati

TAGS

T2G6003028-FL

TriQuint Semiconductor

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