• Part: TGA2611-SM
  • Description: GaN LNA
  • Manufacturer: TriQuint Semiconductor
  • Size: 548.96 KB
Download TGA2611-SM Datasheet PDF
TriQuint Semiconductor
TGA2611-SM
Features - Frequency Range: 2 - 6 GHz - NF: 1.0 d B - OTOI: 30 d Bm at Pout/tone = 18 d Bm - Small Signal Gain: 22 d B - Return Loss: >10 d B - P1d B: 18 d Bm, PSAT = 26 d Bm at PIN = 10 d Bm - Bias: VD = 10 V, IDQ = 100 m A, VG = -2.3 V - Package Dimensions: 4.0 x 4.0 x 0.85 mm Functional Block Diagram General Description Tri Quint’s TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on Tri Quint’s TQGa N25 0.25 um Ga N on Si C process. The TGA2611-SM operates from 2 to 6 GHz and typically provides >18 d Bm P1d B, >22 d B of small signal gain and 30 d Bm of OTOI with 1.0 d B NF. In addition to the high overall electrical performance, this Ga N amplifier also provides a high level of input power robustness which allows more flexibility in designing the receive chain circuit protection. The TGA2611-SM is available in a low cost, surface mount 20-lead 4x4 mm plastic QFN. It is ideally suited to support both radar and satellite munication applications. Both RF ports have intergraded DC...