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TGA2612-SM - GaN LNA

General Description

TriQuint’s TGA2612-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC process.

12 GHz, the TGA2612-SM typically provides >23 dM small signal gain, 19 dBm P1dB, and 27 dBm OTOI with

Key Features

  • Frequency Range: 6.
  • 12 GHz.
  • NF: 2 dB.
  • P1dB: 19 dBm.
  • OTOI: 28 dBm.
  • Small Signal Gain: 22 dB.
  • Return Loss: >7 dB.
  • Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical.
  • Package Dimensions: 4 x 4 x 0.85 mm Functional Block Diagram General.

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Datasheet Details

Part number TGA2612-SM
Manufacturer TriQuint Semiconductor
File Size 557.99 KB
Description GaN LNA
Datasheet download datasheet TGA2612-SM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and Military Radar  Communications TGA2612-SM 6 - 12 GHz GaN LNA Product Features  Frequency Range: 6 – 12 GHz  NF: 2 dB  P1dB: 19 dBm  OTOI: 28 dBm  Small Signal Gain: 22 dB  Return Loss: >7 dB  Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical  Package Dimensions: 4 x 4 x 0.85 mm Functional Block Diagram General Description TriQuint’s TGA2612-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC process. Covering 6–12 GHz, the TGA2612-SM typically provides >23 dM small signal gain, 19 dBm P1dB, and 27 dBm OTOI with <2 dB of Noise Figure. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness.