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TSF630M

N-Channel MOSFET

TSF630M Features

* 9.5A,200V,Max.RDS(on)=0.40 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSF630M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF630M Datasheet (340.49 KB)

Preview of TSF630M PDF

Datasheet Details

Part number:

TSF630M

Manufacturer:

Truesemi

File Size:

340.49 KB

Description:

N-channel mosfet.

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TAGS

TSF630M N-Channel MOSFET Truesemi

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