TSF830MR - N-Channel MOSFET

Name: TSF830MR
SKU: TSF830MR-1108552

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

4.5A,500V,Max. RDS(on)=1.6 Ω @ VGS =10V.
Low gate charge(typical 12nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N.

📁 TSF830MR Similar Datasheet

Other Datasheets by Truesemi

Published: Apr 12, 2017 |