Datasheet4U Logo Datasheet4U.com

TSF830M

N-Channel MOSFET

TSF830M Features

* 5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSF830M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF830M Datasheet (346.60 KB)

Preview of TSF830M PDF

Datasheet Details

Part number:

TSF830M

Manufacturer:

Truesemi

File Size:

346.60 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF830MR N-Channel MOSFET (Truesemi)

TSF836D50-S9 Saw Filters (Token)

TSF801D125A-S7 Saw Filters (Token)

TSF801D125B-S6 Saw Filters (Token)

TSF80R1K3S1 N-Channel MOSFET (Truesemi)

TSF80R240S1 N-Channel MOSFET (Truesemi)

TSF80R380S1 N-Channel MOSFET (Truesemi)

TSF80R500S1 N-Channel MOSFET (Truesemi)

TSF80R600S1 N-Channel MOSFET (Truesemi)

TSF80R850S1 N-Channel MOSFET (Truesemi)

TAGS

TSF830M N-Channel MOSFET Truesemi

Image Gallery

TSF830M Datasheet Preview Page 2 TSF830M Datasheet Preview Page 3

TSF830M Distributor