TSK60R190S1 Datasheet - Truesemi

N-Channel MOSFET

TSK60R190S1 Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low gate charge (typ. Qg = 70nC)

* 100% avalanche tested TO-247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃

TSK60R190S1 General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSK60R190S1 Datasheet (859.81 KB)

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TSK60R190S1

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Truesemi

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859.81 KB

Description:

N-channel mosfet.

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TSK60R190S1 N-Channel MOSFET Truesemi

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TSK60R190S1 Features

TSK60R190S1 General Description

Datasheet Details

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