TSK20N50M Datasheet - Truesemi

TSK20N50M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSK20N50M Features

* 20A, 500V, RDS(on) = 0.26 @VGS = 10 V

* Low gate charge ( typical 70nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GD S TO-247 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Vo

TSK20N50M Datasheet (718.73 KB)