Description
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- 550V @TJ = 150 ℃.
- Typ. RDS(on) = 0.21Ω.
- Ultra Low gate charge (typ. Qg = 43nC).
- 100% avalanche tested
TO-247
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGSS EAS IAR EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current.
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1.
TSK50R240S1-Truesemi.pdf
