TSP80R1K3S1

N-Channel MOSFET

Truesemi

TSP80R1K3S1 Features

* 850V @TJ = 150 ℃

* Typ. RDS(on) = 1.1Ω

* Ultra Low gate charge (typ. Qg = 15nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drai

TSP80R1K3S1 General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSP80R1K3S1 Datasheet (537.39 KB)

TSP80R1K3S1 Datasheet Preview — Preview of TSP80R1K3S1 PDF

Datasheet Details

Part number:

TSP80R1K3S1

Manufacturer:

Truesemi

File Size:

537.39 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSP80R240S1 N-Channel MOSFET (Truesemi)

TSP80R380S1 N-Channel MOSFET (Truesemi)

TSP80R500S1 N-Channel MOSFET (Truesemi)

TSP80R600S1 N-Channel MOSFET (Truesemi)

TSP830M N-Channel MOSFET (Truesemi)

TSP840M N-Channel MOSFET (Truesemi)

TSP8A100S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP8N60M 600V N-Channel MOSFET (Truesemi)

TSP8N65M N-Channel MOSFET (Truesemi)

TSP058A BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)

TAGS

TSP80R1K3S1 N-Channel MOSFET Truesemi

Image Gallery

TSP80R1K3S1 Features

TSP80R1K3S1 General Description

Datasheet Details

File Size:

Description:

TSP80R1K3S1 Distributor