TSP830M Datasheet, Mosfet, Truesemi

✔ TSP830M Features

5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V
Low gate charge(typical 20nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability Absolute

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TSP830M

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Truesemi

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📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially t

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TSP830M N-Channel MOSFET Truesemi