Datasheet4U Logo Datasheet4U.com

TSP830M N-Channel MOSFET

TSP830M Description

TSP830M/TSF830M TSP830M/TSF830M 500V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSP830M Features

* 5.0A,500V,Max. RDS(on)=1.50 Ω @ VGS =10V
* Low gate charge(typical 20nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

📥 Download Datasheet

Preview of TSP830M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TSP830M
Manufacturer
Truesemi
File Size
346.60 KB
Datasheet
TSP830M-Truesemi.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • TSP8A100S - Trench Schottky Rectifier (Taiwan Semiconductor)
  • TSP058A - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058B - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058C - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SA - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SB - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP058SC - BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)
  • TSP064AL - LOW CAPACITANCE THYRISTOR (FCI)

📌 All Tags

N-Channel MOSFET Truesemi
Truesemi TSP830M-like datasheet