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TSU630M

N-Channel MOSFET

TSU630M Features

* 7.8A,200V,Max.RDS(on)=0.4 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSU630M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSU630M Datasheet (404.72 KB)

Preview of TSU630M PDF

Datasheet Details

Part number:

TSU630M

Manufacturer:

Truesemi

File Size:

404.72 KB

Description:

N-channel mosfet.

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TAGS

TSU630M N-Channel MOSFET Truesemi

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