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8820 Dual N-Channel MOSFET

8820 Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8820 8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Descriptio.
The 8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

8820 Features

* VDS (V) = 20V ID = 6A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Cont

8820 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. TF DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. TF RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Shenzhen Tuofeng Semiconductor T

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Datasheet Details

Part number
8820
Manufacturer
Tuofeng Semiconductor
File Size
171.69 KB
Datasheet
8820-TuofengSemiconductor.pdf
Description
Dual N-Channel MOSFET

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Tuofeng Semiconductor 8820-like datasheet