8820 Datasheet - Tuofeng Semiconductor

8820 Dual N-Channel MOSFET

The 8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its com.

8820 Features

* VDS (V) = 20V ID = 6A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) D1/D2 S1 S1 G1 TSSOP-8 Top View 18 27 36 45 D1/D2 S2 S2 G2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Cont

8820-TuofengSemiconductor.pdf