8822 Datasheet - Tuofeng Semiconductor

8822 Dual N-Channel MOSFET

The 8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configurat.

8822 Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 38mΩ (VGS = 2.5V) TSSOP-8 Top View D1 D2 D1/D2 S1 S1 G1 1 2 3 4 8 D1/D2 7 S2 6 S2 5 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage

8822-TuofengSemiconductor.pdf