MMBTH10LT1 Datasheet, Transistor, Tuofeng Semiconductor

MMBTH10LT1 Features

• Transistor SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.225 W (Tamb=25℃) Collector current ICM: 0.05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage juncti

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MMBTH10LT1

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Tuofeng Semiconductor

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📄 Datasheet

Description:

Npn transistor.

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MMBTH10LT1

Tuofeng Semiconductor

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