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MMBTH11 NPN Transistor

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Description

MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed.

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Applications

* with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings
* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collect

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