Part number:
QM0016P
Manufacturer:
UBIQ
File Size:
344.84 KB
Description:
N-ch 100v fast switching mosfets.
* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 100V RDSON 47mΩ ID 27A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Appl
QM0016P
UBIQ
344.84 KB
N-ch 100v fast switching mosfets.
📁 Related Datasheet
QM0016D - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0016D
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0016D is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0016F - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0016F
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0016F is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0016S - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0016S
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0016S is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0018AD - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0018AD
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0018AD is the highest performance trench N-ch MOSFETs with extreme high cell dens.
QM0004D - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0004D
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0004D is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0004G - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0004G
N-Ch 100V Fast Switching MOSFETs
General Description The QM0004G is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0004P - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0004P
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0004P is the highest performance trench N-ch MOSFETs with extreme high cell densit.
QM0004S - N-Ch 100V Fast Switching MOSFETs
(UBIQ)
QM0004S
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0004S is the highest performance trench N-ch MOSFETs with extreme high cell densit.