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AO3414A - N-Channel Enhancement MOSFET

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Features

  • VDS (V) = 20V ID = 4.2A (VGS=4.5V) RDS(ON) 26m (VGS = 4.5V) RDS(ON) 36m (VGS = 2.5V) RDS(ON) 57m (VGS = 1.8V) UMW AO3414A N-Channel Enhancement MOSFET SOT.
  • 23 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 Continuous Drain TA=25 Current.
  • 1 TA=70 4.2 ID 3.2 Pulsed Drain Current.
  • 2 IDM 15 Power Dissipation.
  • 1 TA=25 TA=70 1.4 PD 0.9 Themal Resistance. Junction-to-Ambient.

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Datasheet Details

Part number AO3414A
Manufacturer UMW
File Size 2.22 MB
Description N-Channel Enhancement MOSFET
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UMW R Features VDS (V) = 20V ID = 4.2A (VGS=4.5V) RDS(ON) 26m (VGS = 4.5V) RDS(ON) 36m (VGS = 2.5V) RDS(ON) 57m (VGS = 1.8V) UMW AO3414A N-Channel Enhancement MOSFET SOT–23 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8 Continuous Drain TA=25 Current *1 TA=70 4.2 ID 3.2 Pulsed Drain Current *2 IDM 15 Power Dissipation *1 TA=25 TA=70 1.4 PD 0.9 Themal Resistance.Junction-to-Ambient *1 RthJA 125 Themal Resistance.Junction-to-Case RthJC 80 Junction and Storage Temperature Range TJ, TSTG -55 to 150 *1The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 Unit V V A W /W /W www.umw-ic.
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