AO3416A - N-Channel MOSFET

Key Features

s.
VDS (V) = 20V.
ID = 6 A (VGS = 4.5V).
RDS(ON) ＜ 25mΩ (VGS = 4.5V).
RDS(ON) ＜ 33mΩ (VGS = 2.5V).
RDS(ON) ＜ 51mΩ (VGS = 1.8V) UMW AO3416A N-Channel MOSFET SOT.
23 1. GATE 2. SOURCE D 3. DRAIN G S.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient t≤10sec Steady State Thermal R.

AO3416A n-channel mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	AO3416A
Manufacturer	UMW
File Size	2.72 MB
Description	N-Channel MOSFET
Datasheet	AO3416A Datasheet

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Full PDF Text Transcription (Reference)

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UMW R ■ Features ● VDS (V) = 20V ● ID = 6 A (VGS = 4.5V) ● RDS(ON) ＜ 25mΩ (VGS = 4.5V) ● RDS(ON) ＜ 33mΩ (VGS = 2.5V) ● RDS(ON) ＜ 51mΩ (VGS = 1.8V) UMW AO3416A N-Channel MOSFET SOT–23 1. GATE 2. SOURCE D 3. DRAIN G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t≤10sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 20 ±8 6 5 30 1.4 0.9 90 125 80 150 -55 to 150 Unit V A W ℃/W ℃ www.umw-ic.